etching test
英 [ˈetʃɪŋ test]
美 [ˈetʃɪŋ test]
网络 浸蚀试验蚀刻试验; 浸蚀试验; 蚀刻试验
双语例句
- By controlling the metal-assisted chemical etching process parameters, various silicon nanostructures were produced for the mass spectrometry efficiency test.
透过利用金属辅助化学蚀刻法，藉由不同的蚀刻参数制备出各种表面结构。 - In2001 Qinglong Brand etching machines are evaluated national quality test standard product by Nation Quality Test Institution;
在2001年“庆龙”牌金属打标机被中国质量检验协会评为国家质量检测达标产品； - Boiling water and water vapour etching test
沸水和水蒸汽侵蚀试验 - Hot sodium hydroxide etching test
热氢氧化钠溶液腐蚀试验 - Research of Accelerated Acid Etching Test of Automotive Topcoating
汽车面漆的加速酸蚀研究 - Plenty of oxidation etching pits are found on the surface of the specimen after the thermal fatigue test, and the surface principal crack is prone to propagate through these etching pits.
实验结果发现，试样表面出现大量的氧化腐蚀坑，表面主裂纹优先通过这些腐蚀坑扩展。 - EPR method is consistent with the oxalic acid etching test.
EPR法与草酸电解浸蚀试验结果相吻合。 - The influences to IGA under different condition were analyzed, especially, through changing the sensitization time and temperature, scan rate and solution temperature. The results were compared with the result of the oxalic acid etching test.
研究了不同条件对敏化度的影响，特别是不同敏化时间、敏化温度、扫描速度、溶液温度对奥氏体不锈钢晶间腐蚀性能的影响，并与草酸电解浸蚀实验结果进行对比。 - The fully-etched binary blazed grating coupler and a normal grating coupler are fabricated by Electron Beam Lithography ( EBL) and Inductively Coupled Plasma ( ICP) etching, and the preliminary test results are obtained by testing the performance of the devices.
利用电子束光刻和感应耦合等离子体刻蚀技术制备了全刻蚀二元闪耀光栅耦合器和普通光栅耦合器，并对其进行了器件性能的测试，获得了一些初步的实验结果。 - The volume ratio of etching solution is studied by etching test and the best etching processes are determined.
通过实验研究选择腐蚀液的配比，并由实验确定了最佳的刻蚀深度和工艺。 - Single crystal growth method, as well as the growth of technology and other factors make SiC crystals very expensive, Melted – KOH etching method causes test wafers serious corrosion, and the corroded wafers cannot be used in productions or other tests.
单晶生长方法以及生长技术水平等因素使得目前SiC单晶片的价格还很昂贵，熔融KOH腐蚀法会严重腐蚀被测晶片，腐蚀后晶片既无法用于生产也无法用于其它测试。 - Combination of ion source parameters used in experiments and spin valve metal film structure, summed up the appropriate etching parameters. Chapter ⅴ shows the test results of GMR sensors chip.
结合实验中使用的离子源和自旋阀金属膜层结构，总结适宜的刻蚀参数和工艺流程。第五章给出了对制作完成的GMR传感器芯片进行的性能测试结果。